New Irregular Mesh Technique Used in Three-Dimensional Simulation of Relaxation Semiconductors

The aim of this work is to simulate correctly in 3D space the phenomena that govern relaxation semiconductors. To avoid relevant constraints inadequate mesh a new technique for refining irregular meshing has been creating. Each length sample will be considered as partial sum geometric series, calculation argument allow calculate distance between nodes. In paper we proposed use an algorithm combined Gummel and Newton Raphson algorithms solve differential equations, linearization transport equations obtained by applying finite difference method, which allowed us time, life time recombination rate. results revealed appearance limited region called front instead charge region, improvement computational with big precision simulation, letting user choice discreet number points wished without saturate memory. This type simple apply can used applied solution structures at different areas all dimensions.